sod-323 jiangsu changjiang electronics technology co., ltd sod-323 plastic-encapsulate diodes ESDBKU3V0D3 esd protection diode description the ESDBKU3V0D3 is designed to pr otect voltage sensitive components from esd. excellent clamping capability, low leakage, and fast response time provide best in class protection on des igns that are exposed to esd. feature ? low reverse stand ? off voltage: 3.0 v ? low leakage current ? response time is typically < 1 ns ? esd rating of class 3(<16kv) per human body model ? iec61000 ? 4 ? 2 level 4 esd protection ? these are pb ? free devices ? low capacitance steering diodes and a tvs diode in a single package application ? computers and peripherals ? communications systems ? audio and video equipment ? high speed data lines ? parallel ports maximum ratings ( t a =25 unless otherwise noted) parameter symbol limit unit electrostatic discharge voltage (iec61000 ? 4 ? 2 ) (note1) air model 30 contact model 30 esd voltage(jesd22-a114-b) (note 1) per human body model 16 esd voltage (note 1) machine model v esd 0.4 kv peak pulse power (8/20s waveform) p pp 300 w peak pulse current (8/20s waveform) i pp 19 a lead solder temperature ? maximum (10 second duration) t l 260 junction temperature t j 150 storage temperature range t stg -55 ~ +150 note: 1.device stressed with ten non-repetitive esd pulses. stresses exceeding maximum ratings may damage the device. ma ximum ratings are stress ratings only.functional operation above the recommended.operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. a,jul,2013
electrical parameter symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current electrical characteristics (t a = 25 c unless otherwise noted ) v rwm (v) i r ( a) @ v rwm v br (v) (2) @ i t =1ma v c1 (v) @i pp (3) =1 a v c2 (v) @i pp (3) =5 a v cmax (v) @i pp(max) (3) =19 a c (pf) @v r =0,f=1mhz device (1) device marking max max min max max max max typ max ESDBKU3V0D3 ac 3 20 4 6 7 10 15.8 1.5 2 (1)other voltages available upon request. (2)v br is measured with a pulse test current i t at an ambient temperature of 25 c . (3) non-repetitive current pulse 8/20 s exponential decay waveform according to iec 61000-4-5. a-2,jul,2013
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 0 50 100 150 200 250 -8-6-4-202468 -100 -80 -60 -40 -20 0 20 40 60 80 100 reverse voltage v r (v) capacitance between terminals c t (pf) t a =25 f=1mhz capacitance characteristics power dissipation p d (mw) power derating curve ambient temperature t a ( ) ESDBKU3V0D3 typical characteristics reverse current i r (ma) reverse voltage v r (v) t a =25 t a =100 reverse characteristics a-2,jul,2013
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